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UT4411

UTC
Part Number UT4411
Manufacturer UTC
Description P-CHANNEL MOSFET
Published Nov 16, 2013
Detailed Description UNISONIC TECHNOLOGIES CO., LTD UT4411 P-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UT4411 uses advanced trench technolog...
Datasheet PDF File UT4411 PDF File

UT4411
UT4411

Overview
UNISONIC TECHNOLOGIES CO.
, LTD UT4411 P-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UT4411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.
 FEATURES * RDS(ON) < 32mΩ @ VGS = -10 V, ID = -8 A * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified  SYMBOL Drain Power MOSFET Gate Source  ORDERING INFORMATION Ordering Number UT4411G-S08-R Note: Pin Assignment: G: Gate D: Drain Package SOP-8 S: Source Pin Assignment 12345678 Packing S S S G D D D D Tape Reel  MARKING www.
unisonic.
com.
tw Copyright © 2016 Unisonic Technologies Co.
, Ltd 1 of 6 QW-R502-191.
D UT4411 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID -8 A Pulsed Drain Current IDM -40 A Power Dissipation PD 3 W Junction Temperature TJ +150 °C Strong Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL DATA PARAMETER Junction-to-Ambient SYMBOL MIN TYP θJA 54  ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) MAX 75 UNIT °C/W PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current BVDSS IDSS IGSS VGS =0 V, ID =-250 µA VDS =-24 V, VGS =0 V VDS =0 V, VGS = ±20 V -30 -1 ±100 V µA nA ON CHARACTERISTICS Gate Threshold Voltage On State Drain Current Static Drain-Source On-Resistance VGS(TH) ID(ON) RDS(ON) VDS =VGS, ID =-250 µA VDS =-5V, VGS =-10 V VGS =-10V, ID =-8A VGS =-4.
5V, ID =-5A -1.
2 -2.
4 V -40 A 26 50 32 55 mΩ DYN...


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