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SI4472DY

Vishay
Part Number SI4472DY
Manufacturer Vishay
Description N-Channel MOSFET
Published Nov 17, 2013
Detailed Description Si4472DY Vishay Siliconix N-Channel 150 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) 0.045 at VGS = 10 V 0.0...
Datasheet PDF File SI4472DY PDF File

SI4472DY
SI4472DY

Overview
Si4472DY Vishay Siliconix N-Channel 150 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) 0.
045 at VGS = 10 V 0.
047 at VGS = 8 V ID (A) 7.
7 7.
5 a FEATURES Qg (Typ.
) 23 nC • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 % Rg Tested • 100 % Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4472DY-T1-E3 (Lead (Pb)-free) Si4472DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET 8 7 6 5 D D D D G D ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.
1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 150 ± 20 7.
7 6.
1 5.
5b, c 4.
5b, c 50 4.
5 2.
6b, c 20 20 5.
9 3.
8 3.
1b, c 2b, c - 55 to 150 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typical 33 17 Maximum 40 21 Unit °C/W Notes: a.
Based on TC = 25 °C.
b.
Surface mounted on 1” x 1” FR4 board.
c.
t = 10 s.
d.
Maximum under steady state conditions is 80 °C/W.
Document Number: 74283 S11-0209-Rev.
C, 14-Feb-11 www.
vishay.
com 1 Free Datasheet http://www.
datasheet4u.
com/ Si4472DY Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductance Dynamicb Inpu...


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