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SI4403BDY

Part Number	SI4403BDY
Manufacturer	Vishay
Description	P-Channel MOSFET
Published	Nov 17, 2013
Detailed Description	Si4403BDY New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.017 @ VGS = ...
Datasheet	SI4403BDY PDF File

Overview

Si4403BDY New Product Vishay Siliconix P-Channel 1.
8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.
017 @ VGS = - 4.
5 V - 20 0.
023 @ VGS = - 2.
5 V 0.
032 @ VGS = - 1.
8 V FEATURES ID (A) - 9.
9 - 8.
5 - 7.
2 D TrenchFETr Power MOSFETS S SO-8 S S S G 1 2 3 4 Top View D Ordering Information: Si4403BDY Si4403BDY-T1 (with Tape and Reel) P-Channel MOSFET 8 7 6 5 D G D D D ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID - 7.
9 IDM IS - 2.
3 2.
5 1.
6 - 55 to 150 - 30 - 1.
3 1.
35 0.
87 W _C - 5.
8 A Symbol VDS VGS 10 secs Steady State - 20 "8 Unit V - 9.
9 - 7.
3 THERMAL RESISTANCE RATINGS Parameter t v 10 sec M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Not...

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SI4403BDY P-Channel MOSFET - Vishay

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