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SI4403CDY

Vishay
Part Number SI4403CDY
Manufacturer Vishay
Description P-Channel MOSFET
Published Nov 17, 2013
Detailed Description New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET FEATURES ID (A)d - 13.4 - 12 - 10.5 36.5 nC Qg (Ty...
Datasheet PDF File SI4403CDY PDF File

SI4403CDY
SI4403CDY

Overview
New Product Si4403CDY Vishay Siliconix P-Channel 1.
8 V (G-S) MOSFET FEATURES ID (A)d - 13.
4 - 12 - 10.
5 36.
5 nC Qg (Typ.
) PRODUCT SUMMARY VDS (V) - 20 RDS(on) () 0.
0155 at VGS = - 4.
5 V 0.
0195 at VGS = - 2.
5 V 0.
0250 at VGS = - 1.
8 V • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4403CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 7 6 5 D D D D G • Adaptor Switch • High Current Load Switch • Notebook S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.
1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit - 20 ±8 - 13.
4 - 10.
7 - 9.
4a, b - 7.
5a, b - 40 - 4.
1 - 2.
1a, b - 15 11.
25 5 3.
2 2.
5a, b 1.
6a, b - 55 to 150 Unit V Continuous Drain ...


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