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NTLUS3A39PZ

ON Semiconductor
Part Number NTLUS3A39PZ
Manufacturer ON Semiconductor
Description Power MOSFET
Published Nov 17, 2013
Detailed Description NTLUS3A39PZ MOSFET – Power, Single, P-Channel, ESD, UDFN, 1.6x1.6x0.55 mm -20 V, -5.2 A Features • UDFN Package with E...
Datasheet PDF File NTLUS3A39PZ PDF File

NTLUS3A39PZ
NTLUS3A39PZ

Overview
NTLUS3A39PZ MOSFET – Power, Single, P-Channel, ESD, UDFN, 1.
6x1.
6x0.
55 mm -20 V, -5.
2 A Features • UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction • Low Profile UDFN 1.
6 x 1.
6 x 0.
55 mm for Board Space Saving • Ultra Low RDS(on) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Optimized for Power Management Applications for Portable Products, Such as Cell Phones, PMP, Media Tablets, DSC, GPS, and Others • Battery Switch • High Side Load Switch MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS −20 V Gate-to-Source Voltage VGS ±8.
0 V Continuous Drain Steady TA = 25°C ID Current (Note 1) State Continuous Drain TA = 85°C Current (Note 1) t ≤ 5 s TA = 25°C −5.
2 A −3.
7 −6.
4 Power Dissipa- Steady TA = 25°C PD tion (Note 1) State 1.
5 W t ≤ 5 s TA = 25°C 2.
3 Continuous Drain Steady TA = 25°C ID Current (Note 2) State TA = 85°C −3.
4 A −2.
4 Power Dissipation (Note 2) TA = 25°C PD 0.
6 W Pulsed Drain Current tp = 10 ms IDM −17 A Operating Junction and Storage Temperature TJ, -55 to °C TSTG 150 Source Current (Body Diode) (Note 2) IS −1 A Lead Temperature for Soldering Purposes TL 260 °C (1/8″ from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.
127 in sq [2 oz] including traces).
2.
Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz.
Cu.
© Semiconductor Components Industries, LLC, 2016 1 May, 2019 − Rev.
2 www.
onsemi.
com V(BR)DSS −20 V MOSFET RDS(on) MAX 39 mW @ −4.
5 V 50 mW @ −2.
5 V 81 mW @ −1.
8 V 147 mW @ −1.
5 V ID MAX −5.
2 A S G D P−Channel MOSFET MARKING DIAGRAM 6 UDFN6 1 AE MG 1 CASE 517AU G A...


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