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NTD12N10

Part Number	NTD12N10
Manufacturer	ON Semiconductor
Description	Power MOSFET
Published	Nov 17, 2013
Detailed Description	NTD12N10 Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK Features http://onsemi.com V(BR)DSS 100 V RDS(o...
Datasheet	NTD12N10 PDF File

Overview

NTD12N10 Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK Features http://onsemi.
com V(BR)DSS 100 V RDS(on) TYP 165 mW @ 10 V N−Channel D ID MAX 12 A • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature Mounting Information Provided for the DPAK Package These are Pb−Free Devices Typical Applications • PWM Motor Controls • Power Supplies • Converters MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Drain−to−Source Voltage (RGS = 1.
0 MW) Gate−to−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) Drain Current − Continuous @ TA = 25°C − Continuous @ TA =100°C − Pulsed (Note 3) Symbol VDSS VDGR VGS VGSM ID ID Value 100 100 ± 20 ± 30 12 7.
0 36 56.
6 0.
38 1.
76 1.
28 − 55 to +175 75 Unit Vdc Vdc Vdc Vpk Adc Apk W W/°C W W °C mJ 1 °C/W 2 3 1 2 3 4 G S MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain DPAK CASE 369C (Surface Mount) STYLE 2 YWW T12 N10G 4 Drain DPAK CASE 369D (Straight Lead) STYLE 2 YWW T12 N10G 1 2 3 Gate Drain Source Y WW T12N10 G = Year = Work Week = Device Code = Pb−Free Package Free Datasheet http://www.
datasheet4u.
com/ IDM PD Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, IL = 12 Apk, L = 1.
0 mH, RG = 25 W) Thermal Resistance − Junction to Case − Junction to Ambient (Note 1) − Junction to Ambient (Note 2) Maximum Temperature for Soldering Purposes, 1/8 in from case for 10 seconds 2 1 3 Drain Gate Source TJ, Tstg EAS 4 RqJC RqJA RqJA TL 2.
65 85 117 260 °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses abov...

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NTD12N10 Power MOSFET - ON Semiconductor

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