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TC58NVG4D2ETA00

Part Number	TC58NVG4D2ETA00
Manufacturer	Toshiba
Description	16 GBIT (2G X 8 BIT) CMOS NAND E2PROM
Published	Nov 18, 2013
Detailed Description	TOSHIBA CONFIDENTIAL TENTATIVE TC58NVG4D2ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 16 GBIT (2G...
Datasheet	TC58NVG4D2ETA00 PDF File

Overview

TOSHIBA CONFIDENTIAL TENTATIVE TC58NVG4D2ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 16 GBIT (2G × 8 BIT) CMOS NAND E PROM (Multi-Level-Cell) DESCRIPTION The TC58NVG4D2 is a single 3.
3 V 16 Gbit (17,968,398,336 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192 + 376) bytes × 128 pages × 2084 blocks.
The device has two 8568-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 8568-byte increments.
The Erase operation is implemented in a single block unit (1 Mbytes + 47 Kbytes: 8568 bytes × 128 pages).
The TC58NVG4D2 is a serial-type memory device whi...

Similar Datasheet

TC58NVG4D2ETA00 16 GBIT (2G X 8 BIT) CMOS NAND E2PROM - Toshiba

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