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MB85R2001

Part Number	MB85R2001
Manufacturer	Fujitsu
Description	Memory FRAM CMOS
Published	Nov 19, 2013
Detailed Description	FUJITSU MICROELECTRONICS DATA SHEET DS05-13107-4E Memory FRAM CMOS 2 M Bit (256 K × 8) MB85R2001 ■ DESCRIPTIONS The ...
Datasheet	MB85R2001 PDF File

Overview

FUJITSU MICROELECTRONICS DATA SHEET DS05-13107-4E Memory FRAM CMOS 2 M Bit (256 K × 8) MB85R2001 ■ DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.
The MB85R2001 is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R2001 can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
The MB85R2001 uses a pseudo-SRAM interface that is compatible with convention...

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