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MBRT200100

GeneSiC
Part Number MBRT200100
Manufacturer GeneSiC
Description (MBRT20045 - MBRT200100R) Silicon Power Schottky Diode
Published Nov 21, 2013
Detailed Description MBRT20045 thru MBRT200100R Silicon Power Schottky Diode Features • High Surge Capability • Types up to 100 V VRRM • Isol...
Datasheet PDF File MBRT200100 PDF File

MBRT200100
MBRT200100


Overview
MBRT20045 thru MBRT200100R Silicon Power Schottky Diode Features • High Surge Capability • Types up to 100 V VRRM • Isolation Type Package Three Tower Package VRRM = 20 V - 100 V IF = 200 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive p p peak reverse voltage g RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature Symbol VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 125 °C TC = 25 °C, tp = 8.
3 ms Conditions MBRT20045 (R) MBRT20060 (R) MBRT20080 (R) MBRT200100 (R) Unit 45 32 45 200 1500 -40 to 150 -40 to 175 60 42 60 200 1500 -40 to 150 -40 to 175 80 57 80 200 1500 -40 to 150 -40 to 175 100 70 100 200 1500 -40 to 150 -40 to 175 V V V A A °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Diode forward voltage Reverse current Symbol VF IR Conditions IF = 100 A, Tj = 25 °C VR = 20 V, Tj = 25 °C VR = 20 V, Tj = 125 °C MBRT20045 (R) MBRT20060(R) MBRT20080 (R) MBRT200100 (R) Unit 0.
75 1 20 0.
18 0.
8 1 20 0.
18 0.
88 1 20 0.
18 0.
88 1 20 0.
18 V mA Thermal characteristics Thermal resistance, junction case RthJC °C/W www.
genesicsemi.
com 1 Free Datasheet http://www.
datasheet4u.
com/ MBRT20045 thru MBRT200100R www.
genesicsemi.
com 2 Free Datasheet http://www.
datasheet4u.
com/ ...


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