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MBRT40030

GeneSiC
Part Number MBRT40030
Manufacturer GeneSiC
Description (MBRT40020 - MBRT40040R) Silicon Power Schottky Diode
Published Nov 21, 2013
Detailed Description MBRT40020 thru MBRT40040R Silicon Power Schottky Diode Features • High Surge Capability • Types up to 100 V VRRM • Isola...
Datasheet PDF File MBRT40030 PDF File

MBRT40030
MBRT40030

Overview
MBRT40020 thru MBRT40040R Silicon Power Schottky Diode Features • High Surge Capability • Types up to 100 V VRRM • Isolation Type Package Three Tower Package VRRM = 20 V - 100 V IF = 400 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive p p peak reverse voltage g RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature Symbol VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 100 °C TC = 25 °C, tp = 8.
3 ms Conditions MBRT40020 (R) MBRT40030 (R) MBRT40035 (R) MBRT40040 (R) Unit 20 14 20 400 3000 -40 to 150 -40 to 175 30 21 30 400 3000 -40 to 150 -40 to 175 35 25 35 400 3000 -40 to 150 -40 to 175 40 28 40 400 3000 -40 to 150 -40 to 175 V V V A A °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Diode forward voltage Reverse current Symbol VF IR Conditions IF = 200 A, Tj = 25 °C VR = 20 V, Tj = 25...


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