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NJVMJD2955T4G

ON Semiconductor
Part Number NJVMJD2955T4G
Manufacturer ON Semiconductor
Description Complementary Power Transistors
Published Nov 25, 2013
Detailed Description MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) Complementary Power Transistors DPAK For Surface Mount Applica...
Datasheet PDF File NJVMJD2955T4G PDF File

NJVMJD2955T4G
NJVMJD2955T4G

Overview
MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications.
Features http://onsemi.
com SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS, 20 WATTS  Lead Formed for Surface Mount Applications in Plastic Sleeves         (No Suffix) Straight Lead Version in Plastic Sleeves (“−1” Suffix) Electrically Similar to MJE2955 and MJE3055 DC Current Gain Specified to 10 Amperes High Current Gain−Bandwidth Product − fT = 2.
0 MHz (Min) @ IC = 500 mAdc Epoxy Meets UL 94 V−0 @ 0.
125 in ESD Ratings:  Human Body Model, 3B > 8000 V  Machine Model, C > 400 V NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Packages* DPAK CASE 369C STYLE 1 IPAK CASE 369D STYLE 1 MARKING DIAGRAMS AYWW J xx55G DPAK A Y WW Jxx55 G AYWW J xx55G IPAK = Assembly Location = Year = Work Week = Device Code x = 29 or 30 = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2012 February, 2012 − Rev.
12 1 Publication Order Number: MJD2955/D Free Datasheet http://www.
datasheet4u.
com/ MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25C Derate above 25C Total Power Dissipation (Note 1) @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IC IB PD{ Max 60 70 5 10 6 20 0.
16 1.
75 0.
014 − 55 to +150 Unit Vdc Vdc Vdc Adc Adc W W/C W W...


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