DatasheetsPDF.com

NTD24N06

ON Semiconductor
Part Number NTD24N06
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Nov 25, 2013
Detailed Description NTD24N06 MOSFET – Power, N-Channel, DPAK/IPAK 60 V, 24 A Designed for low voltage, high speed switching applications in...
Datasheet PDF File NTD24N06 PDF File

NTD24N06
NTD24N06


Overview
NTD24N06 MOSFET – Power, N-Channel, DPAK/IPAK 60 V, 24 A Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Features • Pb−Free Packages are Available Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 10 MW) Gate−to−Source Voltage − Continuous − Non−repetitive (tpv10 ms) Drain Current − Continuous @ TA = 25°C, TJ = 150°C − Continuous @ TA = 25°C, TJ = 175°C − Continuous @ TA = 100°C, TJ = 175°C − Single Pulse (tpv10 ms), TJ = 175°C Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) Operating and Storage Temperature Range VDSS VDGR VGS VGS ID ID ID IDM PD TJ, Tstg 60 60 ±20 ±30 24 27 19 80 62.
5 0.
42 1.
88 1.
36 −55 to +175 Vdc Vdc Vdc Adc Adc Adc Apk W W/°C W W °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, L = 1.
0 mH, IL(pk) = 18 A, VDS = 60 Vdc) EAS 162 mJ Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) RqJC RqJA RqJA °C/W 2.
4 80 110 Maximum Lead Temperature for Soldering Purposes, 1/8 in from case for 10 seconds TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
When surface mounted to an FR−4 board using the 0.
5 sq in drain pad size.
2.
When surface mounted to an FR−4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2014 1 May, 2019 − Rev.
5 http://onsemi.
com V(BR)DSS 60 V RDS(on) TYP 32 mW D ID MAX 24 A N−Channel G S 4 4 12 3 DPAK CASE 369C (Surface Mount) STYLE 2 1 2 3 IPAK ...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)