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AP15T03J

Advanced Power Electronics
Part Number AP15T03J
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Nov 26, 2013
Detailed Description AP15T03H/J Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteris...
Datasheet PDF File AP15T03J PDF File

AP15T03J
AP15T03J

Overview
AP15T03H/J Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 80mΩ 12A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP15T03J) is available for low-profile applications.
G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 30 ±20 12 6.
4 50 12.
5 0.
1 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 10 110 Units ℃/W ℃/W Data & specifications subject to change without notice 200601041 Free Datasheet http://www.
datasheet4u.
com/ AP15T03H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min.
30 1 Typ.
0.
02 7 4 1.
4 2.
4 6 22 11 2.
4 280 70 47 1.
1 Max.
Units 80 100 3 1 25 ±100 7 450 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA VGS=10V, ID=8A VGS=4.
5V, ID=5A VDS=VGS, ID=250uA VDS=10V, ID=8A Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=±20V ID=8A VDS=24V VGS=4.
5V VDS=15V ID=8A RG=3.
3Ω,VGS=10V RD=1.
88Ω VGS=0V VDS=25V f=1.
0MHz f=1.
0...


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