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CMLT2207G

Central Semiconductor
Part Number CMLT2207G
Manufacturer Central Semiconductor
Description COMPLEMENTARY SILICON TRANSISTORS
Published Nov 27, 2013
Detailed Description CMLT2207G SURFACE MOUNT DUAL, COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The C...
Datasheet PDF File CMLT2207G PDF File

CMLT2207G
CMLT2207G

Overview
CMLT2207G SURFACE MOUNT DUAL, COMPLEMENTARY SILICON TRANSISTORS w w w.
c e n t r a l s e m i .
c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2207G consists of one isolated 2N2222A NPN transistor and one complementary isolated 2N2907A PNP transistor, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package.
This PICOmini™ device has been designed for small signal general purpose amplifier and switching applications.
MARKING CODE: L7G SOT-563 CASE • Device is Halogen Free by design MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA NPN (Q1) 75 40 6.
0 PNP (Q2) 60 60 5.
0 600 350 -65 to +150 357 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) NPN (Q1) PNP (Q2) SYMBOL TEST CONDITIONS MIN MAX MIN MAX ICBO VCB=60V 10 ICBO VCB=50V 10 ICBO VCB=60V, TA=125°C 10 ICBO VCB=50V, TA=125°C 10 ICEV VCE=60V, VEB(OFF)=3.
0V 10 ICEV VCE=30V, VEB(OFF)=500mV 50 IEBO VEB=3.
0V 10 BVCBO IC=10μA 75 60 BVCEO IC=10mA 40 60 BVEBO IE=10μA 6.
0 5.
0 VCE(SAT) IC=150mA, IB=15mA 0.
3 0.
4 VCE(SAT) IC=500mA, IB=50mA 1.
0 1.
6 VBE(SAT) IC=150mA, IB=15mA 0.
6 1.
2 1.
3 VBE(SAT) IC=500mA, IB=50mA 2.
0 2.
6 hFE VCE=10V, IC=0.
1mA 35 75 VCE=10V, IC=1.
0mA 50 100 hFE hFE VCE=10V, IC=10mA 75 100 hFE VCE=10V, IC=150mA 100 300 100 300 hFE VCE=1.
0V, IC=150mA 50 hFE VCE=10V, IC=500mA 40 50 - UNITS nA nA nA nA nA nA nA V V V V V V V R3 (20-January 2010) Free Datasheet http://www.
datasheet4u.
com/ CMLT2207G SURFACE MOUNT DUAL, COMPLEMENTARY SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: SYMBOL TEST CONDITIONS fT VCE=20V, IC=20mA, f=100MHz fT VCE=20V, IC=50mA, f=100MHz Cob VCB=10V, IE=0, f=1.
0MHz Cib VEB=0.
5V, IC=0, f=1.
0MHz Cib VEB=2.
0V, IC=0, f=1.
0MHz hie VCE=10V, IC=1.
0mA, f=1.
0kHz hie VCE=10V, IC=10mA, f=1.
0kHz...


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