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DMN66D0LW

Diodes
Part Number DMN66D0LW
Manufacturer Diodes
Description N-Channel MOSFET
Published Nov 28, 2013
Detailed Description DMN66D0LW N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database...
Datasheet PDF File DMN66D0LW PDF File

DMN66D0LW
DMN66D0LW


Overview
DMN66D0LW N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.
Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected Gate, 1KV (HBM) Lead Free/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • • • • • • • • • SOT-323 NEW PRODUCT Case: SOT-323 Case Material: Molded Plastic.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe).
Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.
006 grams (approximate) Drain D Gate ESD PROTECTED, 1KV TOP VIEW Gate Protection Diode Source G TOP VIEW S EQUIVALENT CIRCUIT Maximum Ratings @TA = 25°C unless otherwise specified Symbol VDSS VGSS ID Value 60 ±20 115 73 800 Units V V mA Characteristic Drain-Source Voltage Gate-Source Voltage (Note 1) Drain Current (Note 1) Continuous Continuous Continuous @ 100°C Pulsed Thermal Characteristics @TA = 25°C unless otherwise specified Symbol PD RθJA TJ, TSTG Value 200 625 -55 to +150 Units mW °C/W °C Characteristic Total Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Notes: @TA = 25°C unless otherwise specified Symbol BVDSS @ TC = 25°C @ TC = 125°C IDSS IGSS VGS(th) @ TJ = 25°C @ TJ = 125°C RDS (ON) gFS Ciss...



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