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AP2306AGN-HF

Advanced Power Electronics
Part Number AP2306AGN-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE
Published Nov 30, 2013
Detailed Description AP2306AGN-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼...
Datasheet PDF File AP2306AGN-HF PDF File

AP2306AGN-HF
AP2306AGN-HF

Overview
AP2306AGN-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Capable of 2.
5V gate drive ▼ Lower on-resistance ▼ Surface mount package ▼ RoHS Compliant S SOT-23 G D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID D 30V 35mΩ 5A Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-23 package is widely used for all commercial-industrial applications.
G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.
5V Continuous Drain Current , VGS @ 4.
5V Pulsed Drain Current 1 3 3 Rating 30 +8 5 4 20 1.
38 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance Junction-ambient 3 Value 90 Unit ℃/W Data and specifications subject to change without notice 1 200810141 Free Datasheet http://www.
datasheet4u.
com/ AP2306AGN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=4.
5V, ID=5A VGS=2.
5V, ID=2.
6A VGS=1.
8V, ID=1.
0A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Min.
30 0.
3 - Typ.
9 8.
5 1 3 5 9 20 5 400 90 70 Max.
Units 35 50 80 1.
2 1 25 +100 15 1050 V mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF VDS=VGS, ID=250uA VDS=5V, ID=5A VDS=30V, VGS=0V VGS= +8V ID=5A VDS=16V VGS=4.
5V VDS=15V ID=1A RG=3.
3Ω,VGS=5V RD=15Ω VGS=0V VDS=25V f=1.
0MHz Drain-Source Leakage Current (Tj=70 C) VDS=24V ,VGS=0V Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off De...


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