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IRF9204PBF

International Rectifier
Part Number IRF9204PBF
Manufacturer International Rectifier
Description Power MOSFET
Published Dec 1, 2013
Detailed Description PD - 96277B Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating T...
Datasheet PDF File IRF9204PBF PDF File

IRF9204PBF
IRF9204PBF

Overview
PD - 96277B Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated l Lead-Free Description This HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
IRF9204PbF HEXFET® Power MOSFET D VDSS = -40V RDS(on) = 16mΩ ID = -74A G S D G D S TO-220AB IRF9204PbF G D S G a te D r a in S o u rce Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS (Thermally limited) EAS (Tested ) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Max.
-74 -53 -56 -300 143 0.
95 ± 20 Units A ™ W W/°C V mJ A mJ d Single Pulse Avalanche Energy Tested Value Ù h 270 502 See Fig.
17a, 17b, 14, 15 -55 to + 175 Repetitive Avalanche Energy Operating Junction and Storage Temperature Range g i °C 300 (1.
6mm from case ) 10 lbf in (1.
1N m) Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw y y Thermal Resistance RθJC RθCS RθJA Junction-to-Case j i Parameter Typ.
Max.
1.
05 ––– 62 Units °C/W Case-to-Sink, Flat, Greased Surface Junction-to-Ambient i ––– 0.
50 ––– www.
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