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AOD200

Freescale
Part Number AOD200
Manufacturer Freescale
Description N-Channel MOSFET
Published Dec 2, 2013
Detailed Description AOD200 30V N-Channel MOSFET General Description The AOD200 uses trench MOSFET technology that is uniquely optimized to p...
Datasheet PDF File AOD200 PDF File

AOD200
AOD200

Overview
AOD200 30V N-Channel MOSFET General Description The AOD200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.
In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode.
Features VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.
5V) 30V 36A < 7.
8mΩ < 11mΩ D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Maximum 30 Units V ±20 V Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C C TC=25° C C TC=100° TA=25° C C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG 36 28 120 14 11 28 39 50 25 2.
5 1.
6 -55 to 175 A A mJ W W ° C A Avalanche energy L=0.
1mH C TC=25° Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 15 41 2.
1 Max 20 50 3 Units ° C/W ° C/W ° C/W 1/6 www.
freescale.
net.
cn Free Datasheet http://www.
datasheet4u.
com/ AOD200 30V N-Channel MOSFET Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.
5V, ID=15A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V C TJ=125° 1.
3 120 6.
3 9.
5 8.
7 60 0.
7 1 36 860 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 325 7 0.
3 10 VGS=10V, VDS=15V, ID=20A 3.
5 1084 470 24 0.
7 12.
8 5.
3 3.
2 1.
2 6.
7 VGS=10V, VDS=15V, RL=0.
75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 11 24 2.
1 15.
5 2.
0 14 30 17 36 1300 615 40 1.
1 16 7 7.
8 11.
5 11 1.
85 Min 30 1 5 100...


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