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IRFI624B

Fairchild Semiconductor
Part Number IRFI624B
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Dec 2, 2013
Detailed Description IRFW624B / IRFI624B November 2001 IRFW624B / IRFI624B 250V N-Channel MOSFET General Description These N-Channel enhanc...
Datasheet PDF File IRFI624B PDF File

IRFI624B
IRFI624B

Overview
IRFW624B / IRFI624B November 2001 IRFW624B / IRFI624B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
Features • • • • • • 4.
1A, 250V, RDS(on) = 1.
1Ω @VGS = 10 V Low gate charge ( typical 13.
5 nC) Low Crss ( typical 9.
5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ● ◀ ▲ ● ● G! G S D2-PAK IRFW Series G D S I2-PAK IRFI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) IRFW624B / IRFI624B 250 4.
1 2.
6 16.
4 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * 75 4.
1 4.
9 5.
5 3.
13 49 0.
39 -55 to +150 300 TJ, Tstg TL Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 2.
54 40 62.
5 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Fairchild Semiconductor Corporation Rev.
B, November 2001 Free Datasheet http://www.
datasheet4u.
com/ IRFW624B / IRFI624B Electrical Characteristics Symbol Para...


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