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BSB013NE2LXI

Part Number	BSB013NE2LXI
Manufacturer	Infineon
Description	n-Channel Power MOSFET
Published	Dec 10, 2013
Detailed Description	BSB013NE2LXI OptiMOSTM Power-MOSFET Features • Optimized SyncFET for high performance Buck converter • Integrated monol...
Datasheet	BSB013NE2LXI PDF File

Overview

BSB013NE2LXI OptiMOSTM Power-MOSFET Features • Optimized SyncFET for high performance Buck converter • Integrated monolithic Schottky like diode • Low profile (<0.
7 mm) • 100% avalanche tested • 100% R G Tested Product Summary VDS RDS(on),max ID Qoss Qg(0V.
.
10V) 25 1.
3 163 39 62 • Double-sided cooling • Compatible with DirectFET® package MX footprint and outline 1) • Qualified according to JEDEC2) for target applications CanPAKTM M MG-WDSON-2 • Pb-free lead plating; RoHS compliant V mW A nC nC Type BSB013NE2LXI Package MG-WDSON-2 Outline MX Marking 02E2 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current ...

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BSB013NE2LXI n-Channel Power MOSFET - Infineon

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