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BSB053N03LPG

Infineon
Part Number BSB053N03LPG
Manufacturer Infineon
Description Power MOSFET
Published Dec 10, 2013
Detailed Description BSB053N03LP G OptiMOSTM2 Power-MOSFET Features • Pb-free plating; RoHS compliant • Dual sided cooling • Low profile (<0...
Datasheet PDF File BSB053N03LPG PDF File

BSB053N03LPG
BSB053N03LPG

Overview
BSB053N03LP G OptiMOSTM2 Power-MOSFET Features • Pb-free plating; RoHS compliant • Dual sided cooling • Low profile (<0.
7 mm) • 100% avalanche tested • Qualified for consumer level application • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Optimized for high switching frequency DC/DC converter • Low parasitic inductance Product Summary V DS R DS(on),max ID 30 5.
3 71 V mΩ A MG-WDSON-2 • Compatible with DirectFET® package MP footprint and outline 1) Type BSB053N03LP G Package MG-WDSON-2 Outline MP Marking 3003 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=10 V, T A=25 °C, R thJA=55 K/W 2) Pulsed drain current3) Avalanche current, single pulse 4) Avalanche energy, single pulse Gate source voltage 1) TM Value 71 45 17 284 50 75 ±20 Unit A I D,pulse I AS E AS V GS T C=25 °C T C=25 °C I D=44 A, R GS=25 Ω mJ V CanPAK uses DirectFET ® technology licensed from International Rectifier Corporation.
DirectFET® is a registered trademark of International Rectifier Corporation.
Rev.
2.
0 page 1 2009-05-11 Free Datasheet http://www.
datasheet4u.
com/ BSB053N03LP G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Symbol Conditions P tot T C=25 °C T A=25 °C, R thJA=55 K/W 2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j, T stg Value 42 2.
3 -40 .
.
.
150 55/150/56 °C Unit W Parameter Symbol Conditions min.
Values typ.
max.
Unit Thermal characteristics Thermal resistance, junction - case R thJC bottom top Device on PCB R thJA 6 cm2 cooling area2) 1.
0 3 55 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=250 µA V DS=30 V, V GS=0 V, T j=25 °C V DS=30 V, V GS=0 V, T...


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