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BSB056N10NN3G

Infineon
Part Number BSB056N10NN3G
Manufacturer Infineon
Description n-Channel Power MOSFET
Published Dec 10, 2013
Detailed Description n-Channel Power MOSFET OptiMOS™ BSB056N10NN3 G Data Sheet 2.3, 2011-02-28 Final Industrial & Multimarket Free Datashee...
Datasheet PDF File BSB056N10NN3G PDF File

BSB056N10NN3G
BSB056N10NN3G

Overview
n-Channel Power MOSFET OptiMOS™ BSB056N10NN3 G Data Sheet 2.
3, 2011-02-28 Final Industrial & Multimarket Free Datasheet http://www.
datasheet4u.
com/ OptiMOS™ Power-MOSFET BSB056N10NN3 G 1 Description OptiMOS™100V products are class leading power MOSFETs for highest power density and energy efficient solutions.
Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 100V the best choice forthe demanding requirements of voltage regulator solutions in Solar, Drives, Datacom and Telecom applications.
Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in.
OptiMOS™ products are available in high performance packages to tackle your most challenging applications giving full flexibility in optimizing space- efficiency and cost.
Features • • • • • • • • • Optimized for high switching frequency DC/DC converter Excellent Qg x RDS(on) product (FOM) Very low on-resistance RDS(on) Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Double sided cooling Compatible with DirectFET® package MN footprint and outline1) Low parasitic inductance Low profile (<0.
7 mm) Applications • • • • Synchronous rectification Primary side switches Power management for high performance computing High power density point of load converters Key Performance Parameters Value 100 5.
6 83 73 56 Unit V mΩ A nC Related Links IFX OptiMOS webpage IFX OptiMOS product brief IFX OptiMOS spice models IFX Design tools Table 1 Parameter VDS RDS(on),max ID QOSS Qg.
typ Type BSB056N10NN3 G Package MG-WDSON-2 Marking 0110 1) DirectFET ® is a trademark of International Rectifier Corporation.
BSB056N10NN3G uses DirectFET ® technology licensed from International Rectifier Corporation Final Data Sheet 1 2.
3, 2011-02-28 Free Datasheet http://www.
datasheet4u.
com/ OptiMOS™ Power-MOSFET BSB056N10NN3 G 2 Maximum ratings at Tj = 25 °C, unless otherwise specified.
Table 2 Para...


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