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BSB008NE2LX

Infineon
Part Number BSB008NE2LX
Manufacturer Infineon
Description n-Channel Power MOSFET
Published Dec 10, 2013
Detailed Description MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-MOSFET,25V BSB008NE2LX DataSheet R...
Datasheet PDF File BSB008NE2LX PDF File

BSB008NE2LX
BSB008NE2LX

Overview
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-MOSFET,25V BSB008NE2LX DataSheet Rev.
2.
0 Final PowerManagement&Multimarket OptiMOSTMPower-MOSFET,25V BSB008NE2LX 1Description Features •Optimizedfore-fuseandOR-ingapplication •UltralowRdsoninCanPAK-MXfootprint •Lowprofile(<0.
7mm) •100%avalanchetested •100%RgTested •Double-sidedcooling •CompatiblewithDirectFET®packageMXfootprintandoutline1) •QualifiedaccordingtoJEDEC2)fortargetapplications CanPAKMX-size Drain Drain Table1KeyPerformanceParameters Parameter Value Unit VDS 25 V RDS(on),max 0.
8 mΩ ID 180 A Qoss 74 nC Qg(0V.
.
10V) 258 nC Gate Source Type/OrderingCode BSB008NE2LX Package MG-WDSON-2 Marking 04E2 RelatedLinks - 1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation.
DirectFET® is a registered trademark of International Rectifier Corporation.
2) J-...


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