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DHG20C1200PB

IXYS
Part Number DHG20C1200PB
Manufacturer IXYS
Description Sonic Fast Recovery Diode
Published Dec 16, 2013
Detailed Description DHG 20 C 1200 PB preliminary Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery ...
Datasheet PDF File DHG20C1200PB PDF File

DHG20C1200PB
DHG20C1200PB

Overview
DHG 20 C 1200 PB preliminary Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 V RRM = 1200 V I FAV = 2x 10 A t rr = 200 ns DHG 20 C 1200 PB Backside: cathode Features / Advantages: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Applications: ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) Package: ● Housing: TO-220 ●rIndustry standard outline ●rEpoxy meets UL 94V-0 ●rRoHS compliant Ratings Symbol VRRM IR VF Definition max.
repetitive reverse voltage reverse current Conditions VR = 1200 V VR = 1200 V IF = IF = IF = IF = 10 A 20 A 10 A 20 A d = 0.
5 TC = 105°C TVJ = 150°C TVJ = 125 °C TVJ = 25 °C TVJ = 25 °C TVJ = 125 °C TVJ = 25 °C min.
typ.
max.
1200 10 0.
2 2.
22 2.
93 2.
23 3.
14 10 1.
23 90 1.
50 Unit V µA mA V V V V A V mΩ K/W °C W A A A ns ns pF forward voltage I FAV VF0 rF R thJC T VJ Ptot I FSM I RM t rr CJ average forward current threshold voltage slope resistance rectangular for power loss calculation only thermal resistance junction to case virtual junction temperature total power dissipation max.
forward surge current max.
reverse recovery current -55 TC = 25 °C t = 10 ms (50 Hz), sine IF = 10 A; VR = 600 V TVJ = 45°C TVJ = 25 °C TVJ = 125°C TVJ = 25 °C TVJ = 125°C TVJ = 25 °C -di F /dt = 250 A/µs VR = 600 V; f = 1 MHz 9 10.
5 200 350 4 150 85 60 reverse recovery time junction capacitance IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per diode unless otherwise s...


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