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IXFK64N50Q3

IXYS
Part Number IXFK64N50Q3
Manufacturer IXYS
Description Power MOSFET
Published Dec 16, 2013
Detailed Description Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFK64N50Q3 IXFX64...
Datasheet PDF File IXFK64N50Q3 PDF File

IXFK64N50Q3
IXFK64N50Q3

Overview
Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFK64N50Q3 IXFX64N50Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C 64 A 160 A 64 A 4 J IS  IDM, VDD  VDSS, TJ  150C TC = 25C 50 1000 -55 .
.
.
+150 150 -55 .
.
.
+150 V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.
6 mm (0.
062in.
) from Case for 10s 260 °C Mounting Torque (TO-264) Mounting Force (PLUS247) 1.
13/10 20.
.
120 /4.
5.
.
27 Nm/lb.
in N/lb TO-264 PLUS247 10 g 6 g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.
5 • ID25, Note 1 Characteristic Values Min.
Typ.
Max.
500 V 3.
5 6.
5 V 200 nA 50 A 2 mA 85 m VDSS = ID25 =  RDS(on) trr  500V 64A 85m 250ns TO-264 (IXFK) G D S Tab PLUS247 (IXFX) G D S Tab G = Gate D = Drain S = Source Tab = Drain Features  Low Intrinsic Gate Resistance  Low Package Inductance  Fast Intrinsic Rectifier  Low RDS(on) and QG Advantages  High Power Density  Easy to Mount  Space Savings Applications  DC-DC Converters  Battery Chargers  Switch-Mode and Resonant-Mode Power Supplies  DC Choppers  Temperature and Lighting Controls © 2019 IXYS CORPORATION, All Rights Reserved DS100346A(12/19) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs VDS = 20V, ID = 0.
5 • ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz RGi Gate Input Resistance td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25 RG = 1 (External) Qg(on) Qgs Qgd VGS = 10V, VDS = 0.
5 • VDSS, ID = 0.
5...


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