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IXTA76P10T

IXYS
Part Number IXTA76P10T
Manufacturer IXYS
Description Power MOSFET
Published Dec 16, 2013
Detailed Description TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T D G S ...
Datasheet PDF File IXTA76P10T PDF File

IXTA76P10T
IXTA76P10T

Overview
TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-268HV TO-247 Maximum Ratings - 100 V - 100 V 15 V 25 V - 76 A - 230 A - 38 A 1 J 298 W -55 .
.
.
+150 C 150 C -55 .
.
.
+150 C 300 °C 260 °C 1.
13 /10 Nm/lb.
in.
2.
5 g 3.
0 g 4.
0 g 6.
0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250A VGS(th) VDS = VGS, ID = - 250A IGSS VGS = 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = -10V, ID = 0.
5 • ID25, Note 1 Characteristic Values Min.
Typ.
Max.
-100 V - 2.
0 - 4.
0 V 100 nA - 15 A - 750 A 25 m © 2017 IXYS CORPORATION, All Rights Reserved VDSS = ID25 =  RDS(on) - 100V - 76A 25m TO-268HV (IXTT) G TO-263 AA (IXTA) S D (Tab) G S D (Tab) TO-220AB (IXTP) GD S TO-247 (IXTH) D (Tab) G DS D (Tab) G = Gate S = Source D = Drain Tab = Drain Features  International Standard Packages  Avalanche Rated  Extended FBSOA  Fast Intrinsic Diode  Low RDS(ON) and QG Advantages  Easy to Mount  Space Savings Applications  High-Side Switching  Push Pull Amplifiers  DC Choppers  Automatic Test Equipment  Current Regulators  Battery Charger Applications DS100024C(9/15) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = -10V, ID = 0.
5 • ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = - 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25 RG = 1 (External) Qg(on) Qgs Qgd VGS = -10V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25 ...


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