DatasheetsPDF.com

BSZ035N03MSG

Infineon
Part Number BSZ035N03MSG
Manufacturer Infineon
Description Power MOSFET
Published Dec 18, 2013
Detailed Description BSZ035N03MS G OptiMOS™3 M-Series Power-MOSFET Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low...
Datasheet PDF File BSZ035N03MSG PDF File

BSZ035N03MSG
BSZ035N03MSG


Overview
BSZ035N03MS G OptiMOS™3 M-Series Power-MOSFET Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100% avalanche tested • N-channel • Very low on-resistance R DS(on) @ V GS=4.
5 V • Excellent gate charge x R DS(on) product (FOM) • Qualified according to JEDEC1) for target applications • Superior thermal resistance • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type BSZ035N03MS G Package PG-TSDSON-8 Marking 035N03M Product Summary V DS R DS(on),max V GS=10 V V GS=4.
5 V ID 30 3.
5 4.
3 40 PG-TSDSON-8 A V mΩ Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.
5 V, T C=25 °C V GS=4.
5 V, T C=100 °C V GS=4.
5 V, T A=25 °C, R thJA=60 K/W 2) Pulsed drain current3) Avalanche current, single pulse 4) Avalanche energy, single pulse Gate source voltage 1) Value 40 40 40 40 Unit A 18 160 20 150 ±20 mJ V I D,pulse I AS E AS V GS T C=25 °C T C=25 °C I D=20 A, R GS=25 Ω J-STD20 and JESD22 Rev.
1.
6 page 1 2009-11-05 Free Datasheet http://www.
datasheet4u.
com/ BSZ035N03MS G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Symbol Conditions P tot T C=25 °C T A=25 °C, R thJA=60 K/W 2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j, T stg Value 69 2.
1 -55 .
.
.
150 55/150/56 °C Unit W Parameter Symbol Conditions min.
Values typ.
max.
Unit Thermal characteristics Thermal resistance, junction - case Device on PCB R thJC R thJA 6 cm2 cooling area2) 1.
8 60 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=250 µA V DS=30 V, V GS=0 V, T j=25 °C V DS=30 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I G...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)