DatasheetsPDF.com

BSZ086P03NS3G

Infineon
Part Number BSZ086P03NS3G
Manufacturer Infineon
Description Power MOSFET
Published Dec 18, 2013
Detailed Description BSZ086P03NS3 G OptiMOSTM P3 Power-Transistor Features • single P-Channel in S3O8 • Qualified according JEDEC 1) for tar...
Datasheet PDF File BSZ086P03NS3G PDF File

BSZ086P03NS3G
BSZ086P03NS3G

Overview
BSZ086P03NS3 G OptiMOSTM P3 Power-Transistor Features • single P-Channel in S3O8 • Qualified according JEDEC 1) for target applications • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications • Pb-free; RoHS compliant • applications: battery management, load switching • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID -30 8.
6 -40 PG-TSDSON-8 V mΩ A Type BSZ086P03NS3E G Package PG-TSDSON-8 Marking 086P3N Lead free Yes Halogen free Yes Packing non-dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=70 °C T A=25 °C2) Pulsed drain current Avalanche e...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)