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BSZ097N04LSG

Infineon
Part Number BSZ097N04LSG
Manufacturer Infineon
Description Power MOSFET
Published Dec 18, 2013
Detailed Description BSZ097N04LS G OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC con...
Datasheet PDF File BSZ097N04LSG PDF File

BSZ097N04LSG
BSZ097N04LSG

Overview
BSZ097N04LS G OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 100% Avalanche tested • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type BSZ097N04LS G Package PG-TSDSON-8 Marking 097N04L Product Summary V DS R DS(on),max ID 40 9.
7 40 PG-TSDSON-8 V mΩ A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.
5 V, T C=25 °C V GS=4.
5 V, T C=100 °C V GS=10 V, T A=25 °C, R thJA=60 K/W 2) Pulsed drain current3) Avalanche current, single pulse 4) Avalanche energy, single pulse Gate source voltage 1) Value 40 30 40 25 Unit A 12 160 20 20 ±20 mJ V I D,pulse I AS E AS V GS T C=25 °C T C=25 °C I D=20 A, R GS=25 Ω J-STD20 and JESD22 Rev.
2.
0 page 1 2010-03-18 Free Datasheet http://www.
datasheet4u.
com/ BSZ097N04LS G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Symbol Conditions P tot T C=25 °C T A=25 °C, R thJA=60 K/W 2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j, T stg Value 35 2.
1 -55 .
.
.
150 55/150/56 °C Unit W Parameter Symbol Conditions min.
Values typ.
max.
Unit Thermal characteristics Thermal resistance, junction - case Device on PCB R thJC R thJA 6 cm2 cooling area2) 3.
6 60 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=14 µA V DS=40 V, V GS=0 V, T j=25 °C V DS=40 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.
5 V, I D=20 ...


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