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BSZ105N04NSG

Infineon
Part Number BSZ105N04NSG
Manufacturer Infineon
Description Power MOSFET
Published Dec 18, 2013
Detailed Description BSZ105N04NS G OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC con...
Datasheet PDF File BSZ105N04NSG PDF File

BSZ105N04NSG
BSZ105N04NSG

Overview
BSZ105N04NS G OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 100% Avalanche tested • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type BSZ105N04NS G Package PG-TSDSON-8 Marking 105N04N Product Summary V DS R DS(on),max ID 40 10.
5 40 PG-TSDSON-8 V mΩ A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=10 V, T A=25 °C, R thJA=60 K/W 2) Pulsed drain current3) Avalanche current, single pulse 4) Avalanche energy, single pulse Gate source voltage 1) Value 40 29 Unit A 11 160 20 20 ±20 mJ V I D,pulse I AS E AS V GS T C=25 °C T C=25 °C I D=20 A, R GS=25 Ω J-STD20 and JESD22 Rev.
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