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BSZ180P03NS3EG

Infineon
Part Number BSZ180P03NS3EG
Manufacturer Infineon
Description Power MOSFET
Published Dec 18, 2013
Detailed Description BSZ180P03NS3E G OptiMOSTM P3 Power-Transistor Features • single P-Channel in S3O8 • Qualified according JEDEC 1) for ta...
Datasheet PDF File BSZ180P03NS3EG PDF File

BSZ180P03NS3EG
BSZ180P03NS3EG

Overview
BSZ180P03NS3E G OptiMOSTM P3 Power-Transistor Features • single P-Channel in S3O8 • Qualified according JEDEC 1) for target applications • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications • Pb-free; RoHS compliant • ESD protected • applications: battery management, load switching • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID -30 18 -39.
6 PG-TSDSON-8 V mΩ A Type BSZ180P03NS3E G Package PG-TSDSON-8 Marking 180P3NE Lead free Yes Halogen free Yes Packing non-dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=70 °C T A=25 °C2) Pulsed drain ...


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