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BSZ340N08NS3G

Infineon
Part Number BSZ340N08NS3G
Manufacturer Infineon
Description Power MOSFET
Published Dec 18, 2013
Detailed Description BSZ340N08NS3 G OptiMOSTM3 Power-Transistor Features • Ideal for high frequency switching • Optimized technology for DC/...
Datasheet PDF File BSZ340N08NS3G PDF File

BSZ340N08NS3G
BSZ340N08NS3G

Overview
BSZ340N08NS3 G OptiMOSTM3 Power-Transistor Features • Ideal for high frequency switching • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type BSZ340N08NS3 G Product Summary V DS R DS(on),max ID 80 34 23 V mΩ A Package Marking PG-TSDSON-8 340N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=10 V, T A=25 °C, R thJA=60 K/W 2) Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage 1) 2) Value 23 15 Unit A 6 92 20 ±20 mJ V I D,pulse E AS V GS T C=25 °C I D=12 A, R GS=25 Ω J-STD20 and JESD22 Device on 40 mm x 40 mm x 1.
5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical...


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