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RUR040N02

Rohm
Part Number RUR040N02
Manufacturer Rohm
Description Small Signal MOSFET
Published Dec 22, 2013
Detailed Description RUR040N02 　　Nch 20V 4A Small Signal MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 20V 35mΩ ±4.0A 1.0W lFeatures 1) 1....
Datasheet PDF File RUR040N02 PDF File

RUR040N02
RUR040N02

Overview
RUR040N02 　　Nch 20V 4A Small Signal MOSFET 　　 Datasheet VDSS RDS(on)(Max.
) ID PD 20V 35mΩ ±4.
0A 1.
0W lFeatures 1) 1.
5V drive 2) Low on-resistance 3) Built-in G-S protection diode 4) Small surface mount package(TSMT3) lOutline SOT-346T SC-96 TSMT3 　 　　　　　　 lInner circuit 　 lPackaging specifications Packing Embossed Tape Reel size (mm) 180 lApplication Switching Type Tape width (mm) Basic ordering unit (pcs) 8 3000 Taping code TL Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) XF Parameter Symbol Value Unit Drain - Source voltage VDSS 20 V Continuous drain current ID ±4.
0 A Pulsed drain current IDP*1 ±8.
0 A Gate - Source voltage VGSS ±10 V Power dissipation PD*2 1.
0 W PD*3 0.
7 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ 　　　　　　　　　　　　　　　　　　　　　　　 　　　　　　　　　　　　　　　　　　　　　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.
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com © 2018 ROHM Co.
, Ltd.
All rights reserved.
1/11 20180702 - Rev.
002 　 　 RUR040N02 　 　 　 　　 　 lThermal resistance Parameter Thermal resistance, junction - ambient 　 　 　 　 　 　 　 　 Datasheet 　 　 　　　　　　　　　　　　　　　　 Symbol RthJA*2 RthJA*3 Values Min.
Typ.
Max.
- - 125 - - 178 Unit ℃/W ℃/W lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Breakdown voltage temperature coefficient Zero gate voltage drain current 　ΔV(BR)DSS　 ID = 1mA 　　 ΔTj 　 　 referenced to 25℃ IDSS VDS = 20V, VGS = 0V Gate - Source leakage current IGSS VGS = ±10V, VDS = 0V Gate threshold voltage Gate threshold voltage temperature coefficient VGS(th) VDS = 10V, ID = 1mA 　ΔVGS(th) 　 ID = 1mA 　　 ΔTj 　 　 referenced to 25℃ VGS = 4.
5V, ID = 4.
0A Static drain - source on - state resistance RDS(on)*4 VGS = 2.
5V, ID = 4.
0A VGS = 1.
8V, ID = 2.
0A VGS = 1.
5V, ID = 0.
8A Gate resistance RG f = 1MHz, open drain Forward Transfer Admitt...


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