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HF150-50S

Part Number	HF150-50S
Manufacturer	Advanced Semiconductor
Description	NPN SILICON RF POWER TRANSISTOR
Published	Mar 23, 2005
Detailed Description	HF150-50S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF150-50S is Designed for PACKAGE STYLE .500 4L STUD (A...
Datasheet	HF150-50S PDF File

Overview

HF150-50S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF150-50S is Designed for PACKAGE STYLE .
500 4L STUD (A) .
112 x 45° A Ø .
630 NOM FEATURES: • PG = 14 dB min.
at 150 W/30 MHz • IMD3 = 100 dBc max.
at 150 W (PEP) • Omnigold™ Metalization System B C E C E B E D G MAXIMUM RATINGS IC VCBO VEBO VCEO PDISS TJ T STG θ JC 10 A 110 V 4.
0 V 55 V 233 W @ TC = 25 C -65 OC to +200 OC -65 OC to +150 OC 0.
75 OC/W O DIM A B C D E F G H 1/4-28 UNF-2A F H MINIMUM inches / mm MAXIMUM inches / mm .
220 / 5.
59 .
545 / 13.
84 .
495 / 12.
57 .
003 / 0.
08 .
185 / 4.
70 .
497 / 12.
62 .
230 / 5.
84 1.
050 / 26.
67 .
555 / 14.
10 .
505 / 12.
83 .
007 / 0.
18 .
830 / 21.
08 .
198 / 5.
03 .
530 / 13.
46 ORDER CODE: ASI10613 CHARACTERISTICS SYMBOL BV CBO BV CES BV CEO BV EBO ICEO ICES hFE Cob GP IMD3 ηC IC = 100 mA IC = 100 mA IC = 100 mA IE = 10 mA VCE = 30 V VE = 60 V VCE = 6 V VCB = 50 V TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 110 110 55 4.
0 5 5 UNITS V V V V mA mA --pF dB dBc % IC = 1.
4 A f = 1.
0 MHz 18 43.
5 220 14 VCE = 50 V ICQ =100 mA POUT = 150 W(PEP) 37 -30 A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
A 1/1 ...

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