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HF5-12S

Advanced Semiconductor
Part Number HF5-12S
Manufacturer Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Published Mar 23, 2005
Detailed Description HF5-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF5-12S is Designed for PACKAGE STYLE .380 4L STUD .112x4...
Datasheet PDF File HF5-12S PDF File

HF5-12S
HF5-12S


Overview
HF5-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF5-12S is Designed for PACKAGE STYLE .
380 4L STUD .
112x45° A FEATURES: • PG = 20 dB min.
at 5 W/30 MHz • IMD3 = -30 dBc max.
at 5 W (PEP) • Omnigold™ Metalization System B C E ØC E B H I J D MAXIMUM RATINGS #8-32 UNC-2A G F E IC VCBO VCEO VEBO PDISS TJ T STG θ JC 4.
5 A 36 V DIM MINIMUM inches / mm MAXIMUM inches / mm 18 V 4.
0 V 80 W @ TC = 25 OC -65 OC to +200 OC -65 C to +150 C 2.
2 OC/W O O A B C D E F G H I J .
220 / 5.
59 .
980 / 24.
89 .
370 / 9.
40 .
004 / 0.
10 .
320 / 8.
13 .
100 / 2.
54 .
450 / 11.
43 .
090 / 2.
29 .
155 / 3.
94 .
230 / 5.
84 .
385 / 9.
78 .
007 / 0.
18 .
330 / 8.
38 .
130 / 3.
30 .
490 / 12.
45 .
100 / 2.
54 .
175 / 4.
45 .
750 / 19.
05 ORDER CODE: ASI10591 CHARACTERISTICS SYMBOL BV CBO BV CES BV CEO BV EBO ICES hFE COB GP IMD3 IC = 50 mA IC = 50 mA IC = 50 mA IE = 5.
0 mA VCE = 15 V VCE = 5.
0 V TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 36 36 18 4.
0 5 UNITS V V V V mA --pF dB dBc IC = 1.
0 A f = 1.
0 MH...



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