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HF8-28F

Part Number	HF8-28F
Manufacturer	Advanced Semiconductor
Description	NPN SILICON RF POWER TRANSISTOR
Published	Mar 23, 2005
Detailed Description	HF8-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF8-28F is Designed for PACKAGE STYLE .380 4L FLG FEATURE...
Datasheet	HF8-28F PDF File

Overview

HF8-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF8-28F is Designed for PACKAGE STYLE .
380 4L FLG FEATURES: • PG = 21 dB min.
at 8 W/30 MHz • IMD3 = -30 dBc max.
at 8 W (PEP) • Omnigold™ Metalization System B .
112 x 45° A E B C E C D E Ø.
125 NOM.
FULL R J .
125 MAXIMUM RATINGS F IC VCBO VCEO VCES VEBO PDISS TJ T STG θ JC O 1.
0 A 65 V 35 V 65 V 4.
0 V 13.
0 W @ TC = 25 C -65 C to +200 C -65 OC to +150 OC 13.
5 OC/W O O DIM A B C D E F G H I J .
240 / 6.
10 .
004 / 0.
10 .
085 / 2.
16 .
160 / 4.
06 MINIMUM inches / mm G H I MAXIMUM inches / mm .
220 / 5.
59 .
785 / 19.
94 .
720 / 18.
29 .
970 / 24.
64 .
230 / 5.
84 .
730 / 18.
54 .
980 / 24.
89 .
385 / 9.
78 .
006 / 0.
15 .
105 / 2.
67 .
180 / 4.
57 .
280 / 7.
11 .
255 / 6.
48 ORDER CODE: ASI10600 CHARACTERISTICS SYMBOL BV CEO BV CES BV CBO BV EBO ICBO hFE COB GP POUT IC = 200 mA IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5.
0 V VCB = 30 V VCC = 28 V TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 35 65 65 4.
0 1.
0 UNITS V V V V ...

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