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MMBT1010LT1

Motorola
Part Number MMBT1010LT1
Manufacturer Motorola
Description PNP Silicon Driver Transistors
Published Dec 31, 2013
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MMBT1010LT1/D Low Saturation Voltage PNP Silicon Drive...
Datasheet PDF File MMBT1010LT1 PDF File

MMBT1010LT1
MMBT1010LT1

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MMBT1010LT1/D Low Saturation Voltage PNP Silicon Driver Transistors Part of the GreenLine™ Portfolio of devices with energy–conserving traits.
This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy in general purpose driver applications.
This device is housed in the SOT-23 and SC–59 packages which are designed for low power surface mount applications.
COLLECTOR • Low VCE(sat), < 0.
1 V at 50 mA Applications • LCD Backlight Driver • Annunciator Driver • General Output Device Driver MAXIMUM RATINGS (TA = 25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current — Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 45 15 5.
0 100 BASE EMITTER Unit Vdc Vdc Vdc mAdc MMBT1010LT1 MSD1010T1 Motorola Preferred Devices PNP GENERAL PURPOSE DRIVER TRANSISTORS SURFACE MOUNT MMBT1010LT1 CASE 318–07, STYLE 6 SOT-23 MSD1010T1 DEVICE MARKING MMBT1010LT1 = GLP MSD1010T1 = GLP THERMAL CHARACTERISTICS Rating Power Dissipation TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Range Symbol PD(1) Max 225 1.
8 RθJA TJ Tstg 556 150 – 55 ~ + 150 Unit mW mW/°C °C/W °C °C CASE 318D–03, STYLE 1 SC-59 ELECTRICAL CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Symbol V(BR)CEO V(BR)EBO ICBO ICEO hFE1(2) VCE(sat)(2) Condition IC = 10 mA, IB = 0 IE = 10 µA, IE = 0 VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VCE = 5 V, IC = 100 mA IC = 10 mA, IB = 1.
0 mA IC = 50 mA, IB = 5.
0 mA IC = 100 mA, IB = 10 mA Min 15 5.
0 — — 300 — — Max — — 0.
1 100 600 0.
1 0.
1 0.
19 1.
1 Unit Vdc Vdc µA µA — Vdc VBE(sat)(2) IC = 100 mA, IB = 10 mA — (1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
(2) Pulse Test: Pulse Widt...


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