DatasheetsPDF.com

AP3986P

Advanced Power Electronics
Part Number AP3986P
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Jan 2, 2014
Detailed Description AP3986P RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼...
Datasheet PDF File AP3986P PDF File

AP3986P
AP3986P

Overview
AP3986P RoHS-compliant Product Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 600V 1.
4Ω 6A S Description AP3986 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.
The TO-220 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial applications.
The device is suited for switch mode power supplies, DC-AC converters and high current high speed switching circuits.
G D S TO-220(P) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 600 ±30 6 3.
3 20 92.
6 2 Units V V A A A W mJ A ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 20 6 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.
35 62 Unit ℃/W ℃/W Data & specifications subject to change without notice 1 200805051 Free Datasheet http://www.
datasheet4u.
com/ AP3986P Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=125 C) o o Test Conditions VGS=0V, ID=1mA 3 Min.
600 2 - Typ.
2.
8 34 6 15 30 32 205 55 210 35 Max.
Units 1.
4 4 100 250 ±100 55 V Ω V S uA...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)