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AP3990W

Advanced Power Electronics
Part Number AP3990W
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Jan 2, 2014
Detailed Description AP3990W RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼...
Datasheet PDF File AP3990W PDF File

AP3990W
AP3990W


Overview
AP3990W RoHS-compliant Product Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 600V 0.
6Ω 10A S Description AP3990 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.
The TO-3P type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness.
The TO-3P package is widely preferred for commercial-industrial applications.
The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits.
G D S TO-3P Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 600 ± 30 10 6.
5 40 174 2 Units V V A A A W mJ A ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 50 10 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.
72 40 Unit ℃/W ℃/W Data & specifications subject to change without notice 1 200805092 Free Datasheet http://www.
datasheet4u.
com/ AP3990W Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=125 C) o o Test Conditions VGS=0V, ID=1.
0mA VGS=10V, ID=5.
0A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=600V, VGS=0V VDS=600V, VGS=0V VGS=±30V ID=1...


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