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AOB10N60

Alpha & Omega Semiconductors
Part Number AOB10N60
Manufacturer Alpha & Omega Semiconductors
Description 10A N-Channel MOSFET
Published Jan 11, 2014
Detailed Description AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary The AOT10N60 & AOB10N60 & A...
Datasheet PDF File AOB10N60 PDF File

AOB10N60
AOB10N60

Overview
AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-220 TO-220F Top View TO-263 D2PAK D 700V@150℃ 10A < 0.
75W D AOT10N60 S D G AOTF10N60 S GD G S G AOB10N60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT10N60/AOB10N60 AOTF10N60 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 10 10* 7.
2 7.
2* 36 4.
4 290 580 45 5 TC=25°C Power Dissipation B Derate above 25oC PD 250 2 50 0.
4 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS AOT10N60/AOB10N60 65 0.
5 AOTF10N60 65 -- Maximum Junction-to-Case RqJC 0.
5 2.
5 * Drain current limited by maximum junction temperature.
S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev.
9.
0: January 2021 www.
aosmd.
com Page 1 of 6 AOT10N60/AOB10N60/AOTF10N60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250μA, ...


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