DatasheetsPDF.com

AOTF15S65

Alpha & Omega Semiconductors
Part Number AOTF15S65
Manufacturer Alpha & Omega Semiconductors
Description Power Transistor
Published Jan 11, 2014
Detailed Description AOT15S65L/AOB15S65L/AOTF15S65L/AOTF15S65 650V 15A α MOS TM Power Transistor General Description Product Summary The A...
Datasheet PDF File AOTF15S65 PDF File

AOTF15S65
AOTF15S65

Overview
AOT15S65L/AOB15S65L/AOTF15S65L/AOTF15S65 650V 15A α MOS TM Power Transistor General Description Product Summary The AOT15S65L & AOB15S65L & AOTF15S65L & AOTF15S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested TO-220 D TO-220F Top View TO-263 D2PAK D 750V 60A 0.
29Ω 17.
2nC 3.
6µJ D AOT15S65L S D G AOTF15S65(L) S GD S G AOB15S65L Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT15S65L/AOB15S65L Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID 15 10 Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy C EAR Single pulsed avalanche energy G EAS TC=25°C Power Dissipation B Derate above 25oC PD 208 1.
7 MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J TL Thermal Characteristics Parameter Symbol AOT15S65L/AOB15S65L Maximum Junction-to-Ambient A,D Maximum Case-to-sink A RθJA 65 RθCS 0.
5 Maximum Junction-to-Case RθJC 0.
6 * Drain current limited by maximum junction temperature.
AOTF15S65 650 ±30 15* 10* 60 2.
4 86 173 50 0.
4 100 20 -55 to 150 300 AOTF15S65 65 -2.
5 G AOTF15S65L 15* 10* 34 0.
3 AOTF15S65L 65 -3.
7 S Units V V A A mJ mJ W W/ oC V/ns °C °C Units °C/W °C/W °C/W Rev2.
0: Sepetember 2017 www.
aosmd.
com Page 1 of 7 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C IDSS Zer...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)