DatasheetsPDF.com

AOI5N40

Alpha & Omega Semiconductors
Part Number AOI5N40
Manufacturer Alpha & Omega Semiconductors
Description 4.2A N-Channel MOSFET
Published Jan 11, 2014
Detailed Description AOD5N40/AOI5N40 400V,4.2A N-Channel MOSFET General Description The AOD5N40 & AOI5N40 have been fabricated using an adva...
Datasheet PDF File AOI5N40 PDF File

AOI5N40
AOI5N40

Overview
AOD5N40/AOI5N40 400V,4.
2A N-Channel MOSFET General Description The AOD5N40 & AOI5N40 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 500V@150℃ 4.
2A < 1.
6Ω 100% UIS Tested! 100% Rg Tested! TO252 DPAK Top View Bottom View D D Top View TO251A IPAK Bottom View D G S G AOD5N40 S G AOI5N40 G D S S G D S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentB Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy H Peak diode recovery dv/dt TC=25° C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F C Maximum 400 ±30 4.
2 2.
8 10 1.
7 43 86 5 78 0.
63 -50 to 150 300 Units V V A A mJ mJ V/ns W W/ oC ° C ° C VGS TC=25° C TC=100° C ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS RθJC Typical 38 1.
33 Maximum 55 0.
5 1.
6 Units ° C/W ° C/W ° C/W Rev1: Jan 2012 www.
aosmd.
com Page 1 of 6 Free Datasheet http://www.
datasheet4u.
com/ AOD5N40/AOI5N40 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol STATIC PARAMETERS BVDSS BVDSS /∆TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Maximum Body-Diode Pulsed Current 260 VGS=0V, VDS=25V, f=1MH...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)