DatasheetsPDF.com

AOW2918

Alpha & Omega Semiconductors
Part Number AOW2918
Manufacturer Alpha & Omega Semiconductors
Description 100V N-Channel MOSFET
Published Jan 12, 2014
Detailed Description AOW2918 100V N-Channel MOSFET General Description The AOW2918 uses Trench MOSFET technology that is uniquely optimized ...
Datasheet PDF File AOW2918 PDF File

AOW2918
AOW2918

Overview
AOW2918 100V N-Channel MOSFET General Description The AOW2918 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.
In addition, switching behavior is well controlled with a soft recovery body diode.
This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100V 90A < 7mΩ 100% UIS Tested 100% Rg Tested TO-262 Top View D Bottom View G G D S S D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Maximum 100 Units V Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.
1mH C C TC=25° Power Dissipation B Power Dissipation A TC=100° C C TA=25° TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case C VGS C TC=25° TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG ±20 90 70 260 13 10 35 61 267 133 2.
1 1.
33 -55 to 175 V A A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 12 50 0.
45 Max 15 60 0.
56 Units ° C/W ° C/W ° C/W Rev 0 : Aug 2011 Page 1 of 6 Free Datasheet http://www.
datasheet4u.
com/ AOW2918 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=100V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS，ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125° C VDS=5V, ID=20A IS=1A,VGS=0V 2.
7 260 5.
6 9 34 0.
7 1 90 2580 VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz 1530 37 1.
5 38 VGS=10V, VDS=50V, ID=20A 12 12 17 VGS=10V, VDS=50V, RL=2.
5Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 24 30 24 46 230 38 53 66 53 65 320 53 3430 2035 63 7 12 3.
3 M...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)