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SQD40N04-10A

Freescale
Part Number SQD40N04-10A
Manufacturer Freescale
Description Automotive N-Channel MOSFET
Published Jan 16, 2014
Detailed Description SQD40N04-10A Automotive N-Channel 40 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) ()...
Datasheet PDF File SQD40N04-10A PDF File

SQD40N04-10A
SQD40N04-10A

Overview
SQD40N04-10A Automotive N-Channel 40 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.
5 V ID (A) Configuration 40 0.
010 0.
014 42 Single D FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested • AEC-Q101 Qualifiedd • Compliant to RoHS Directive 2002/95/EC TO-252 G Drain Connected to Tab G D S Top View S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free TO-252 SQD40N04-10A-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Continuous Source Current (Diode Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.
1 mH TC = 25 °C TC = 125 °C Conduction)a TC = 25 °C TC = 125 °C SYMBOL VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 40 ± 20 42 35 42 168 30 45 71 24 - 55 to + 175 mJ W °C A UNIT V THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a.
Package limited.
b.
Pulse test; pulse width  300 μs, duty cycle  2 %.
c.
When mounted on 1" square PCB (FR-4 material).
d.
Parametric verification ongoing.
PCB Mountc SYMBOL RthJA RthJC LIMIT 50 2.
1 UNIT °C/W 1/9 www.
freescale.
net.
cn Free Datasheet http://www.
datasheet4u.
com/ SQD40N04-10A Automotive N-Channel 40 V (D-S) 175 ??C MOSFET SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 250 μA VDS = 0 V, VGS = ± 20 V VGS = 0 V VGS = 0 V VGS = 0 V VGS = 10 V VGS = 10 V Drain-Source On-State Resistancea RDS(on) VGS = 10 V VGS = 10 V VGS = 4.
5 V Forward Transconductanceb Dynamicb Input Capacitance Output...


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