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AM40N04-30DE

Analog Power
Part Number AM40N04-30DE
Manufacturer Analog Power
Description N-Channel MOSFET
Published Jan 16, 2014
Detailed Description Analog Power N-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench proces...
Datasheet PDF File AM40N04-30DE PDF File

AM40N04-30DE
AM40N04-30DE

Overview
Analog Power N-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
• • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DPAK saves board space Fast switching speed High performance trench technology AM40N04-30DE PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 32 @ VGS = 10V 40 42 @ VGS = 4.
5V ID (A) 33 29 ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Symbol Limit Units Parameter VDS 40 Drain-Source Voltage V VGS ±20 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation a b a o a o TC=25 C ID 33 40 30 50.
0 IDM IS TC=25 C P D A A W o Continuous Source Current (Diode Conduction) Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambient Maximum Junction-to-Case a Maximum 50 3.
0 Units o o RθJA RθJC C/W C/W Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM40N04-30DE_A Free Datasheet http://www.
datasheet4u.
com/ Analog Power AM40N04-30DE SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A A Symbol VGS(th) IGSS IDSS ID(on) r DS(on) gfs VSD A Test Conditions VDS = VGS, ID = 250 uA VDS = 0 V, VGS = 20 V Min 1 Limits Unit Typ Max V nA uA A 32 42 22 1.
1 5 mΩ S V A ±100 o VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55 C 1 25 34 Drain-Source On-Resistance Forward Tranconductance Diode Forward Voltage A VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 33 A VGS = 4.
5 ...


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