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DTU15P03

Din-Tek
Part Number DTU15P03
Manufacturer Din-Tek
Description P-Channel MOSFET
Published Jan 16, 2014
Detailed Description D561 www.daysemi.jp P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) 0.0125 at VGS = -...
Datasheet PDF File DTU15P03 PDF File

DTU15P03
DTU15P03


Overview
D561 www.
daysemi.
jp P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) 0.
0125 at VGS = - 10 V 0.
0205 at VGS = - 4.
5 V ID (A)d - 14.
9 - 11.
6 Qg (Typ.
) 29.
5 nC • • • • Halogen-free TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT APPLICATIONS • Load Switch • Notebook Adaptor Switch TO-252 S G G D S D P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.
1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit - 30 ± 25 - 14.
9 - 11.
9 - 10.
9a, b - 8.
6a, b - 60 - 4.
1 - 2.
2a, b - 20 20 5.
0 3.
2 2.
7a, b 1.
7a, b - 55 to 150 Unit V Continuous Drain Current (TJ = 150 °C) ID Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy IDM IS IAS EAS A mJ Maximum Power Dissipation PD W Operating Junction and Storage Temperature Range TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot Notes: a.
Surface mounted on 1" x 1" FR4 board.
b.
t = 10 s.
c.
Maximum under Steady State conditions is 85 °C/W.
d.
Based on TC = 25 °C.
1 Free Datasheet http://www.
datasheet4u.
com/ t ≤ 10 s Steady State Symbol RthJA RthJF Typical 38 20 Maximum 46 25 Unit °C/W D561 www.
daysemi.
jp SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime F...



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