D51/%56/
www. daysemi. jp
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max. ) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 39 10 19 Single 600 1. 2
FEATURES
• • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V, VGS Rating Reduced Ciss, Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
TO-220AB
D
G
S G D S Top View N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Linear Derating Factor Single Pulse Avalanche Energy...
DTU4N60 PDF File
