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FDP80N06

Fairchild Semiconductor
Part Number FDP80N06
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Jan 16, 2014
Detailed Description FDP80N06 — N-Channel UniFETTM MOSFET FDP80N06 N-Channel UniFETTM MOSFET 60 V, 80 A, 10 mΩ Features • RDS(on) = 8.5 mΩ (...
Datasheet PDF File FDP80N06 PDF File

FDP80N06
FDP80N06

Overview
FDP80N06 — N-Channel UniFETTM MOSFET FDP80N06 N-Channel UniFETTM MOSFET 60 V, 80 A, 10 mΩ Features • RDS(on) = 8.
5 mΩ (Typ.
) @ VGS = 10 V, ID = 40 A • Low Gate Charge (Typ.
57nC) • Low Crss (Typ.
145pF) • Fast Switching • Improved dv/dt Capability • RoHS Compliant November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.
This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
D GDS TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC...


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