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SRF4427G

Advanced Power Technology
Part Number SRF4427G
Manufacturer Advanced Power Technology
Description RF AND MICROWAVE DISCRETE LOW POWER TRANSISTORS
Published Jan 17, 2014
Detailed Description 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 SRF4427 SRF4427G * G Denote...
Datasheet PDF File SRF4427G PDF File

SRF4427G
SRF4427G


Overview
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 SRF4427 SRF4427G * G Denotes RoHS Compliant, Pb Free Terminal Finish RF AND MICROWAVE DISCRETE LOW POWER TRANSISTORS GENERAL RF AMPLIFIER APPLICATIONS Features • • • • Low Cost SO-8 Plastic Surface Mount Package.
S-Parameter Characterization Tape and Reel Packaging Options Available Maximum Available Gain – 20dB(typ) @ 200MHz DESCRIPTION: Designed for general-purpose RF amplifier applications, such as pre-drivers and oscillators.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCEO VCBO VEBO IC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current 18 36 4.
0 400 Vdc Vdc Vdc mA Thermal Data P D T STG R θJA Total Device Dissipation @ TC = 25ºC Derate above 25ºC Storage Temperature Thermal Resistance, Junction to Ambient 1.
5 12.
5 -65 to + 150 125 Watts mW/ ºC ºC ºC/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.
ADVANCEDPOWER.
COM or contact our factory direct.
Rev A 9/2005 Free Datasheet http://www.
datasheet4u.
com/ SRF4427 SRF4427G ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol Test Conditions Value Min.
Typ.
Max.
Units BVCEO BVCES BVEBO ICBO Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 5 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 5 mAdc, IC = 0) Collector Cutoff Current (VCB = 12.
5 Vdc) 800 uA 4 Vdc 36 Vdc 18 Vdc STATIC (on) Symbol Test Conditions Value Min.
Typ.
Max.
Units HFE DC Current Gain (VCE = 5 Vdc, IC = 150 mAdc) 20 200 DYNAMIC Symbol Test Conditions Value Min.
Typ.
Max.
Units FTAU COB Current-Gain Bandwidth Product (IC = 50 mAdc, VCE = 12 Vdc, f = 200 MHz) Output Capacitance (VCB = 12 Vdc, IE = 0, f = 1.
0 MHz) 3.
4 GHz 1.
3 GHz FUNCTIONAL Symbol Test Conditions Value Min.
Typ.
Max.
Unit G Power Gain VCE = 12 Vdc, f = 175 ...



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