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P2804BDG

NIKO-SEM
Part Number P2804BDG
Manufacturer NIKO-SEM
Description N-Channel MOSFET
Published Jan 20, 2014
Detailed Description NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2804BDG TO-252 (DPAK) Lead-Free D PRODUCT SU...
Datasheet PDF File P2804BDG PDF File

P2804BDG
P2804BDG

Overview
NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2804BDG TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 28m ID 10A 1.
GATE 2.
DRAIN 3.
SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.
) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 2 1 SYMBOL VDS VGS LIMITS 40 ±20 10 8 40 32 22 -55 to 150 275 UNITS V V TC = 25 °C TC = 100 °C ID IDM PD Tj, Tstg TL A W °C SYMBOL RθJc RθJA TYPICAL MAXIMUM 3 75 UNITS °C / W °C / W Pulse width limited by maximum junction temperature.
Duty cycle ≤ 1 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold...


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